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| Manufacturer | Toshiba Semiconductor and Storage |
|---|---|
| Series | U-MOSVIII-H |
| Package | Tape & Reel (TR) | Cut Tape (CT) |
| Standard Package | 3000 |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 27A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 13.5A, 10V |
| Vgs(th) (Max) @ Id | 2.3V @ 200μA |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 15 V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta), 32W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-TSON Advance (3.1x3.1) |
| Package / Case | 8-PowerVDFN |
| Base Product Number | TPN6R003 |
| RoHS Status | RoHS Compliant |
|---|---|
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |