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Manufacturer | International Rectifier |
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Series | HEXFET® |
Package | Bulk |
Standard Package | 1 |
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100 V |
Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 28.5mOhm @ 21A | 10V |
Vgs(th) (Max) @ Id | 4V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1690 pF @ 25 V |
FET Feature | - |
Power Dissipation (Max) | 91W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DPAK |
Package / Case | TO-252-3 | DPak (2 Leads + Tab) | SC-63 |
RoHS Status | |
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Moisture Sensitivity Level (MSL) | |
REACH Status | |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |